Paper
28 July 1981 Pulsed Plasma Source For X-Ray Lithography
S. M. Matthews, R. Stringfield, I. Roth, R. Cooper, N. P. Economou, D. C. Flanders
Author Affiliations +
Abstract
A compact, efficient, high-brightness pulsed plasma x-ray source has been demonstrated. The source has a conversion efficiency, from electrical input to usable x-ray energy, of greater than one percent. X rays are emitted from a cylindrical volume approximately 1 mm in diameter and 10-mm long. Various wavelengths can be obtained by the choice of appro-priate plasma materials. Submicrometer features have been replicated using x-rays in the 12 A region to expose a wafer, coated with FBM resist (~ 50X PMMA sensitivity), through a polyimide/gold x-ray mask. The exposure was made through a 25-μm-thick beryllium filter with the wafer 30 cm from the source. Twenty x-ray pulses were required to fully expose the resist. For this experiment the available electrical pulse power supply was limited to one pulse every few minutes. However, the x-ray source itself is capable of much faster pulse rates, and electrical driver technology to power the x-ray source at one or more pulses per second is within present state-of-the-art.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. M. Matthews, R. Stringfield, I. Roth, R. Cooper, N. P. Economou, and D. C. Flanders "Pulsed Plasma Source For X-Ray Lithography", Proc. SPIE 0275, Semiconductor Microlithography VI, (28 July 1981); https://doi.org/10.1117/12.931873
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Plasma

X-rays

X-ray sources

Semiconducting wafers

Photomasks

Lithography

X-ray lithography

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