Low Energy Electron Beam Lithography

K. J. Polasko; Y. W. Yau; R. F. W. Pease

doi:10.1117/12.933415

30 June 1982 Low Energy Electron Beam Lithography

K. J. Polasko, Y. W. Yau, R. F. W. Pease

Proceedings Volume 0333, Submicron Lithography I; (1982) https://doi.org/10.1117/12.933415
Event: 1982 Microlithography Conferences, 1982, Santa Clara, United States

Abstract

The two most serious problems in electron beam lithography are proximity effects and slow throughput. The former arises from the penetration of the electrons which, at conventional electron energies, can greatly exceed the size of the exposure element. Thus much of the exposing electron's energy is wasted. The use of electrons whose energy is much lower results in a much more compact area of exposure and should result in improved linewidth control and in more efficient use of the exposing power.

Citation Download Citation

K. J. Polasko, Y. W. Yau, and R. F. W. Pease "Low Energy Electron Beam Lithography", Proc. SPIE 0333, Submicron Lithography I, (30 June 1982); https://doi.org/10.1117/12.933415

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