Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films

James F. Gibbons; Martin D. Giles; Kwing F. Lee; James T. Walker

doi:10.1117/12.934950

9 August 1983 Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films

James F. Gibbons, Martin D. Giles, Kwing F. Lee, James T. Walker

Author Affiliations +

Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934950
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States

Abstract

Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously. Preliminary circuit simulations have been performed to study the speed and yield possibilities of several basic-circuits.

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James F. Gibbons, Martin D. Giles, Kwing F. Lee, and James T. Walker "Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934950

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