High-speed Intensity-Dependent Refractive Index In Semiconductor-Doped Glasses

C. T. Seaton; G. I. Stegenan; S. S. Yao; C. Karaguleff; R. Fortenberry; A. Gabel; W. Banyai; G. Assanto

doi:10.1117/12.949843

4 March 1986 High-speed Intensity-Dependent Refractive Index In Semiconductor-Doped Glasses

C. T. Seaton, G. I. Stegenan, S. S. Yao, C. Karaguleff, R. Fortenberry, A. Gabel, W. Banyai, G. Assanto

Proceedings Volume 0567, Advances in Materials for Active Optics; (1986) https://doi.org/10.1117/12.949843
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

We report experiments on the magnitude and speed of optical-field induced changes in the refractive index of semiconductor-doped color-filter glasses. A large third-order nonlinear susceptibility of 10^-13 to10^-14m2/W is measured with a response time of tens of picoseconds. Low-loss (planar and channel) optical waveguides have been fabricated by ion-exchange in these glasses.

Citation Download Citation

C. T. Seaton, G. I. Stegenan, S. S. Yao, C. Karaguleff, R. Fortenberry, A. Gabel, W. Banyai, and G. Assanto "High-speed Intensity-Dependent Refractive Index In Semiconductor-Doped Glasses", Proc. SPIE 0567, Advances in Materials for Active Optics, (4 March 1986); https://doi.org/10.1117/12.949843

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