Breakdown in HgCdTe Metal Insulator Semiconductor (MIS) detectors

Yoshihiro Miyamoto; Hiroshi Sakai; Kunihiro Tanikawa

doi:10.1117/12.950681

23 February 1985 Breakdown in HgCdTe Metal Insulator Semiconductor (MIS) detectors

Yoshihiro Miyamoto, Hiroshi Sakai, Kunihiro Tanikawa

Proceedings Volume 0572, Infrared Technology XI; (1985) https://doi.org/10.1117/12.950681
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

Semiconductor breakdown in a HgCdTe MIS detector was investigated. The measured breakdown usualy has a surface potential vs. gate-voltage characteristic peak. Calculations based on an ideal MIS model and tunnel theory have failed to explain the observed breakdown characteristics. This paper proposes a breakdown model which considers the influence of dislocations. The dislocations are modeled as excess donor-like impurities captured around each dislocation core. The model explains the peak and predicts the peak height, including its dependence on carrier concentration and dislocation density.

Citation Download Citation

Yoshihiro Miyamoto, Hiroshi Sakai, and Kunihiro Tanikawa "Breakdown in HgCdTe Metal Insulator Semiconductor (MIS) detectors", Proc. SPIE 0572, Infrared Technology XI, (23 February 1985); https://doi.org/10.1117/12.950681

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