Stressed Ge:Ga Photoconductor Technology

C. Laverny; J. Leotin; C. Villarzel; J. R. Birch

doi:10.1117/12.951766

7 July 1986 Stressed Ge:Ga Photoconductor Technology

C. Laverny, J. Leotin, C. Villarzel, J. R. Birch

Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951766
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

The technology of stress cell systems to accommodate gallium doped germanium photoconductors is presented. The novel feature of the cell is the inclusion of a miniaturized spring calibrated in situ. Stress control measurements were made at 4.2 K by optical and electrical photoconductor characterization.

Citation Download Citation

C. Laverny, J. Leotin, C. Villarzel, and J. R. Birch "Stressed Ge:Ga Photoconductor Technology", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951766

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