Submicrometer Linewidth Production On Integrated Circuit Materials By Uv Laser Radical Etching

Gary L. Loper; Martin D. Tabat

doi:10.1117/12.961151

5 August 1986 Submicrometer Linewidth Production On Integrated Circuit Materials By Uv Laser Radical Etching

Gary L. Loper, Martin D. Tabat

Proceedings Volume 0621, Manufacturing Applications of Lasers; (1986) https://doi.org/10.1117/12.961151
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

We have developed ultraviolet laser-induced, radical-etching processes that can provide practical etch rates and selectivities for most of the important substrate combinations used in silicon microelectronic devices. These processes have been demonstrated, in simple proximity and projection exposure experiments, to produce etch features on surfaces with dimensions of a few tenths of a micrometer. The technique could significantly simplify the fabrication of submicrometer linewidth devices by eliminating photoresist patterning and acid or plasma etching processing steps.

Citation Download Citation

Gary L. Loper and Martin D. Tabat "Submicrometer Linewidth Production On Integrated Circuit Materials By Uv Laser Radical Etching", Proc. SPIE 0621, Manufacturing Applications of Lasers, (5 August 1986); https://doi.org/10.1117/12.961151

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