PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Electroabsorption and electrorefraction properties of bulk and multiple quantum well structures made fr III-V compound semiconductor materials are discussed in this paper. The large electroabsorption that has already been observed is suitable for spatial light modulation. The potential advantages for using these structures for spatial light modulation include high speed of response and monolithic integration with detectors and electronic devices on the same chip. Variations of the electro-optical properties such as absorption wavelength birefringence. nonlinearity and speed of response as a function of structural
William S. C. Chang,H. H. Wieder,T. E. Van Eck,A. L. Kellner, andP. Chu
"Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications", Proc. SPIE 0634, Optical and Hybrid Computing, (13 February 1986); https://doi.org/10.1117/12.964025
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
William S. C. Chang, H. H. Wieder, T. E. Van Eck, A. L. Kellner, P. Chu, "Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications," Proc. SPIE 0634, Optical and Hybrid Computing, (13 February 1986); https://doi.org/10.1117/12.964025