Paper
18 May 1987 Gating Of Thyristors For Laser Power Supplies
J. L. Hudgins, W. M. Portnoy
Author Affiliations +
Proceedings Volume 0735, Pulse Power for Lasers; (1987) https://doi.org/10.1117/12.938054
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States
Abstract
Gating parameters for using thyristors in laser power supplies are discussed. Manufacturer's recommendations for improving turn-on in SCRs are reviewed. Measurements of gate current, voltage, and power, in excess of specified device gate maximums, indicate that peak gate current is the primary factor controlling the rate of rise of anode current.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. L. Hudgins and W. M. Portnoy "Gating Of Thyristors For Laser Power Supplies", Proc. SPIE 0735, Pulse Power for Lasers, (18 May 1987); https://doi.org/10.1117/12.938054
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Cited by 1 scholarly publication.
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KEYWORDS
Diodes

Field effect transistors

Resistance

Power supplies

Pulsed laser operation

Manufacturing

Switches

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