Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon

Le Xu; George Winborne; Marvin Silver; Howard M . Brant; David Adler

doi:10.1117/12.940156

21 August 1987 Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon

Le Xu, George Winborne, Marvin Silver, Howard M . Brant, David Adler

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940156
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

We present experimental results on the transient response of i/n/i hydrogenated amorphous silicon (a-Si:H) structures as a function of voltage. Comparison with M/i/n devices and results from a novel double-pulse experiment show that the transient current is initially space-charge limited and later limited by emission from deep states in the injecting n layer. Theoretical analysis of these results suggests the existence of a peak in the density of states of As-doped a-Si:H located within 0.3 eV of the conduction-band mobility edge.

Citation Download Citation

Le Xu, George Winborne, Marvin Silver, Howard M . Brant, and David Adler "Experimental Study Of Sweep-Out In Hydrogenated Amorphous Silicon", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940156

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