CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 0772 > Article
Open Access Paper
1 January 1987 Focus : The Critical Parameter For Submicron Optical Lithography: Part 2
William H. Arnold, Harry J. Levinson
Author Affiliations +
Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967030
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States
Abstract
Depth of focus requirements and contributions to the focal error budget for submicron optical lithography are reviewed. Models are presented which estimate depth of focus in both thin and thick layers of photoresist. The effects of resist refraction on usable depth of focus are considered. Measurements of image plane tilt, curvature, and astigmatism in 5X reduction lenses collected using an automated, in situ, aerial image monitor are analyzed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
William H. Arnold and Harry J. Levinson "Focus : The Critical Parameter For Submicron Optical Lithography: Part 2", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967030
PROCEEDINGS
 14 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Lens.org Logo
CITATIONS
Cited by 11 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers
Monochromatic aberrations
Optical lithography
Photoresist processing
Lenses
Wafer-level optics
Refraction
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top