Measurement And Control Of Wafer Temperature In A Plasma Etching Reactor

Diane Vogel; Fred Wong

doi:10.1117/12.967044

1 January 1987 Measurement And Control Of Wafer Temperature In A Plasma Etching Reactor

Diane Vogel, Fred Wong

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967044
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

ontrol of wafer temperature is essential for resist survival in plasma etching processes. Real time measurement in the reactor is difficult using conventional methods. In this work, a non-contact measurement technique is employed to study actual wafer temperatures as a function of process parameters. Various methods of thermal coupling between the wafer and the electrode are compared.

Citation Download Citation

Diane Vogel and Fred Wong "Measurement And Control Of Wafer Temperature In A Plasma Etching Reactor", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967044

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