The Improvement Of Stepper Process Latitude By Resist Process

Tony Y. Liu

doi:10.1117/12.967048

1 January 1987 The Improvement Of Stepper Process Latitude By Resist Process

Tony Y. Liu

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967048
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The trend toward tighter design rules and larger chip sizes have driven the demand to obtain the ultimate performance from present steppers. In this study, the G-line steppers with 0.30 NA lens are used to print 1 micron geometries. It is found that the contrast enhanced resist process is feasible to print 1 micron geometries and a single layer resist process can be utilized to print 1 micron square contact by applying a sufficiently thin layer of resist to obtain a conformal coating over the topography. In addition, big contact on the mask should be sized to smaller sizes so that over-exposure can be utilized to open small contacts.

Citation Download Citation

Tony Y. Liu "The Improvement Of Stepper Process Latitude By Resist Process", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967048

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