Paper
10 March 1988 Growth And Application Superlattices And Quantum Wells
A. Torabi, K. F. Brennan, C. J. Summers
Author Affiliations +
Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942332
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
New devices using ultra thin layers of GaAs/A1GaAs have been grown employing Molecular Beam Epitaxy (MBE) technology. Superlattice Avalanche Photodiodes SL-APD and Variably Spaced Superlattice Energy Filter (VSSEF) devices have been fabricated and the results are discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Torabi, K. F. Brennan, and C. J. Summers "Growth And Application Superlattices And Quantum Wells", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); https://doi.org/10.1117/12.942332
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Cited by 5 scholarly publications.
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KEYWORDS
Quantum wells

Superlattices

Gallium arsenide

Interfaces

Ionization

Avalanche photodetectors

Stereolithography

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