Free-Carrier Induced Optical Nonlinearities In Semiconductors

P. A. Wolff; S. Y. Yuen; K. A. Harris; J. W. Cook Jr.; J. F. Schetzina

doi:10.1117/12.943956

3 May 1988 Free-Carrier Induced Optical Nonlinearities In Semiconductors

P. A. Wolff, S. Y. Yuen, K. A. Harris, J. W. Cook Jr., J. F. Schetzina

Proceedings Volume 0878, Multifunctional Materials; (1988) https://doi.org/10.1117/12.943956
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

HgTe and zero-gap HgCdTe have record, picosecond speed, optical nonlinearities at 10.6μ. They are caused by carrier temperature modulation, which produces large carrier density variations in zero-gap materials. The thermal process is only beginning to saturate at 1 MW/cm2; at that intensity , the dielectric constant of HgTe is modulated by about 10%. Further enhancement of these nonlinearities may be achieved with suitable doping or alloying.

Citation Download Citation

P. A. Wolff, S. Y. Yuen, K. A. Harris, J. W. Cook Jr., and J. F. Schetzina "Free-Carrier Induced Optical Nonlinearities In Semiconductors", Proc. SPIE 0878, Multifunctional Materials, (3 May 1988); https://doi.org/10.1117/12.943956

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available