Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition

J G Eden; V Tavitian; C J Kiely

doi:10.1117/12.944386

12 July 1988 Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition

J G Eden, V Tavitian, C J Kiely

Proceedings Volume 0894, Gas Laser Technology; (1988) https://doi.org/10.1117/12.944386
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Experiments in which epitaxial semiconductor films (Ge) have been grown by laser photochemical vapor deposition (LPVD) are described. The results provide a clear example of the ability of LPVD to grow epitaxial films under conditions in which growth is not attrib-utable to substrate heating or adlayer photolysis but rather to species generated photochemically and in the gas phase.

Citation Download Citation

J G Eden, V Tavitian, and C J Kiely "Epitaxial Semiconductor Films Grown By Laser Photochemical Vapor Deposition", Proc. SPIE 0894, Gas Laser Technology, (12 July 1988); https://doi.org/10.1117/12.944386

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available