Hole Tunneling in GaAs/Al[sub]x[/sub]Ga[sub]1-x[/sub]As Barriers and Wells

Kenneth V. Rousseau; Joel N. Schulman; Kang L. Wang

doi:10.1117/12.947282

18 August 1988 Hole Tunneling in GaAs/Al_xGa_1-xAs Barriers and Wells

Kenneth V. Rousseau, Joel N. Schulman, Kang L. Wang

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947282
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We have calculated the tunneling of holes in single-barrier and double-barrier GaAs/AlGaAs diodes using a ten-band, empirical tight-binding model. Transfer matrices are used to model the wave-function on a layer-by-layer level allowing for a simple, transparent imposition of an electric field, and the mixing of heavy, light and splitoff valence band states. Transmission resonances have been found, and hole currents calculated at 77 degrees K. Mixing of different hole states has been examined as a function of aluminum fraction and thickness of the barriers and well.

Citation Download Citation

Kenneth V. Rousseau, Joel N. Schulman, and Kang L. Wang "Hole Tunneling in GaAs/Al_xGa_1-xAs Barriers and Wells", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947282

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