Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth

D. Esteve; M. Djafari - Rouhani; V. V. Pham; A. Amrani; J. J. Simonne

doi:10.1117/12.947357

15 August 1988 Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth

D. Esteve, M. Djafari - Rouhani, V. V. Pham, A. Amrani, J. J. Simonne

Author Affiliations +

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947357
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Molecular Mechanics and Monte Carlo Methods have been applied to the modelling of a heteroepitaxy of CdTe on GaAs presenting a lattice mismatch of 14.7%. The growth of one monolayer has been simulated. The model is restricted to the analysis of defect creation at points of high strain. Creation of stable and unstable defects have been observed from the beginning of the growth in the case of a "soft" substrate.

Citation Download Citation

D. Esteve, M. Djafari - Rouhani, V. V. Pham, A. Amrani, and J. J. Simonne "Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947357

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