Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si

Shiro Sakai; S. S. Chang; R. J. Matyi; H. Shichijo

doi:10.1117/12.947342

15 August 1988 Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si

Shiro Sakai, S. S. Chang, R. J. Matyi, H. Shichijo

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947342
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Liquid Phase Epitaxy (LPE) has been successfully employed to grow GaAs selectively on GaAs-coated Si which was previously prepared by Molecular Beam Epitaxy (MBE). A defect density reduction of more than two orders of magnitude compared to that in MBE layer was obtained. The growth was found to depend strongly on the mask pattern, and a marked difference between the growth on GaAs-coated Si and on pure GaAs substrates was observed. The growth may be explained in terms of the transport of the growing species from bulk of the melt to the substrate surface and the succeeding incorporation into the solid. The experimental results suggest that the transport process plays major roles in the growth on GaAs/Si substrates, while the surface reaction also contributes to the growth rate on GaAs substrate.

Citation Download Citation

Shiro Sakai, S. S. Chang, R. J. Matyi, and H. Shichijo "Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947342

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