Resistless lithography - selective etching of silicon with gallium doping regions

D. Abdullaev; R. Milovanov; D. Zubov

doi:10.1117/12.2266347

30 December 2016 Resistless lithography - selective etching of silicon with gallium doping regions

D. Abdullaev, R. Milovanov, D. Zubov

Proceedings Volume 10224, International Conference on Micro- and Nano-Electronics 2016; 102241P (2016) https://doi.org/10.1117/12.2266347
Event: The International Conference on Micro- and Nano-Electronics 2016, 2016, Zvenigorod, Russian Federation

Abstract

This paper presents the results for used of resistless lithography with a further reactive-ion etching (RIE) in various chemistry after local (Ga+) implantation of silicon with different doping dose and different size doped regions. We describe the different etching regimes for pattern transfer of FIB implanted Ga masks in silicon. The paper studied the influence of the implantation dose on the silicon surface, the masking effect and the mask resistance to erosion at dry etching. Based on these results we conclude about the possibility of using this method to create micro-and nanoscale silicon structures.

Citation Download Citation

D. Abdullaev, R. Milovanov, and D. Zubov "Resistless lithography - selective etching of silicon with gallium doping regions", Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241P (30 December 2016); https://doi.org/10.1117/12.2266347

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