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27 January 1998 Fusion bonding: hetero-interfacial materials analysis and device application
K. A. Black, Aaron R. Hawkins, Near M. Margalit, Dubravko I. Babic, Archie L. Holmes Jr., Ying-Lan Chang, P. Abraham, John Edward Bowers, Evelyn L. Hu
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Proceedings Volume 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review; 1029204 (1998) https://doi.org/10.1117/12.300613
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States
Abstract
A large number of novel devices have been recently demonstrated using wafer fusion to integrate materials with different lattice constants. In many cases, devices created using this technique have shown dramatic improvements over those which maintain a single lattice constant. We present device results and characterizations of the fused interface between several groups of materials.
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K. A. Black, Aaron R. Hawkins, Near M. Margalit, Dubravko I. Babic, Archie L. Holmes Jr., Ying-Lan Chang, P. Abraham, John Edward Bowers, and Evelyn L. Hu "Fusion bonding: hetero-interfacial materials analysis and device application", Proc. SPIE 10292, Heterogeneous Integration: Systems on a Chip: A Critical Review, 1029204 (27 January 1998); https://doi.org/10.1117/12.300613
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KEYWORDS
Materials analysis
Interfaces
Semiconducting wafers
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