Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers

A. Nasibov; V. Kozlovaky; Ya. Skasyraky

doi:10.1117/12.951255

1 June 1989 Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers

A. Nasibov, V. Kozlovaky, Ya. Skasyraky

Proceedings Volume 1041, Metal Vapor Laser Technology and Applications; (1989) https://doi.org/10.1117/12.951255
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Semiconductor compounds ZnS_Sei , and ZnO are used as an active medium for e-beam pumped semiconductor lasers (BBPSVIT The plates of these compouds of 2-3 cm in diameter and about 20-30 um thickness with covered mirrors surfaces form the optical cavity of a 2-D scannable laser. The e-beam energy being 75 keV, the maximum power reached 5 Watts at the wavelength λ = 375 nm (ZnO BBPSL). With the use of these compounds the generation in the range 330-400 nm has been obtained.

Citation Download Citation

A. Nasibov, V. Kozlovaky, and Ya. Skasyraky "Deep Blue And Ultraviolet E-Beam Pumped Semiconductor Lasers", Proc. SPIE 1041, Metal Vapor Laser Technology and Applications, (1 June 1989); https://doi.org/10.1117/12.951255

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available