Paper
5 July 1989 Determination Of Donor And Acceptor Concentrations In GaAs By Electronic Raman Scattering And Selective Luminescence
T. D. Harris, M. Lamont Schnoes
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Abstract
Instrumental options for Raman spectroscopy in light of low noise, Si charged coupled device (CCD) detectors are discussed. The unique sensitivity of this detector in the wavelength interval between 0.8 and 0.98 um is shown. The potential advantages of employing diode laser excitation at wavelengths longer than 0.75 um for nonresonant vibrational Raman spectroscopy along with the available high throughput spectrometers at these wavelengths are delineated. The application of detection in this spectral region to quantitative determination of acceptor impurities in bulk semi-insulating GaAs is demonstrated. The improvement over excitation at 1.06 um is shown to exceed 104.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. D. Harris and M. Lamont Schnoes "Determination Of Donor And Acceptor Concentrations In GaAs By Electronic Raman Scattering And Selective Luminescence", Proc. SPIE 1055, Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology, (5 July 1989); https://doi.org/10.1117/12.951565
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Cited by 1 scholarly publication.
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KEYWORDS
Raman spectroscopy

Sensors

Raman scattering

Luminescence

Gallium arsenide

Spectrometers

Fourier transforms

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