Presentation + Paper
14 May 2018 Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging
Author Affiliations +
Abstract
In the present work we are introducing heterogeneously coupled InAs stranski-krastanov and submonolayer quantum dot as an active material for quantum dot based infrared photodetector. Initially, we have optimized the basic SK on SML heterostructure. The thickness of the GaAs barrier layer is varied from 2.5 to 7.5 nm to tune the vertical coupling between seed SML and top SK QDs. PL and PLE response confirms the carrier tunneling between these heterogeneous QDs. The vertical alignment of SML and SK QDs is shown in Cross sectional TEM images. The sample with 7.5 nm barrier layer is incorporated into a N-I-N based quantum dot infrared photodetector, which shows broader spectral response than standard SK QD based IR detectors.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Das, D. P. Panda, J. Saha, V. Chavan, and S. Chakrabarti "Heterogeneously coupled InAs Stranski-Krastanov and submonolayer quantum dot infrared photodetector for next-generation IR imaging", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241S (14 May 2018); https://doi.org/10.1117/12.2304763
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Heterojunctions

Gallium arsenide

Indium arsenide

Infrared imaging

Luminescence

Photodetectors

Quantum dots

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