A study on ALD ZnS passivation of HgCdTe IRFPAs detectors

A. L. Cui; Z. H. Ye; C. H. Sun; L. F. Liu; X. N. Hu; R. J. Ding; L. He

doi:10.1117/12.2304578

18 June 2018 A study on ALD ZnS passivation of HgCdTe IRFPAs detectors

A. L. Cui, Z. H. Ye, C. H. Sun, L. F. Liu, X. N. Hu, R. J. Ding, L. He

Proceedings Volume 10624, Infrared Technology and Applications XLIV; 106241Z (2018) https://doi.org/10.1117/12.2304578
Event: SPIE Defense + Security, 2018, Orlando, FL, United States

Abstract

As a narrow bandgap semiconductor, the preparation of surface passivation layers on HgCdTe film epilayers is essential in the process of device fabrication. Most new infrared detectors use the mesa structure. A stable and reproducible passivation technology which meets the surface uniform cover of the high aspect ratio mesa is particularly important. Atomic layer deposition (ALD) is a new type of accurate surface thin film preparation technique, which has several characteristics such as depositing large-area uniform films, making the film thickness control at nanometer level feasible, and lower deposition temperature. ALD-ZnS film is prepared on the HgCdTe IRFPAs chip at 65°. I-V and R-V curves are similar to that of IRFPAs with CdTe thermal passivation. This shows that ALD ZnS film has a good potential application in the passivation of high aspect ratio mesa-array HgCdTe devices.

Citation Download Citation

A. L. Cui, Z. H. Ye, C. H. Sun, L. F. Liu, X. N. Hu, R. J. Ding, and L. He "A study on ALD ZnS passivation of HgCdTe IRFPAs detectors", Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241Z (18 June 2018); https://doi.org/10.1117/12.2304578

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