Paper
20 February 2018 Effect of total dose irradiation on Si and InGaAs detectors
Jingjing Shi, Yadong Hu, Shanshan Cui, Xinyu Yu, Lin Huang, Xiaobing Sun, Jin Hong
Author Affiliations +
Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application; 106972H (2018) https://doi.org/10.1117/12.2315486
Event: Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 2017, Nanjing, China
Abstract
According to the environmental requirement of detectors, we studied the characteristics of Si and InGaAs detectors irradiated by the Cobalt60-γray with the total dose of 5krad, 10 krad, 20 krad, 30krad respectively. We measured the dark current and relative spectral responsivity by the Relative Responsivity Measurement Apparatus before and after irradiation. The results suggest that the characteristics of Silicon and InGaAs detectors don't change obviously after different total dose irradiation, both detectors can work in the space irradiation environment due to its stability and reliability.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jingjing Shi, Yadong Hu, Shanshan Cui, Xinyu Yu, Lin Huang, Xiaobing Sun, and Jin Hong "Effect of total dose irradiation on Si and InGaAs detectors", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106972H (20 February 2018); https://doi.org/10.1117/12.2315486
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KEYWORDS
Sensors

Indium gallium arsenide

Silicon

Integrating spheres

Environmental sensing

Light sources

Satellites

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