Analysis on the break-down voltage of 4H-SiC avalanche photodiodes

Yi Jiang; Jun Chen

doi:10.1117/12.2500792

5 November 2018 Analysis on the break-down voltage of 4H-SiC avalanche photodiodes

Yi Jiang, Jun Chen

Proceedings Volume 10814, Optoelectronic Devices and Integration VII; 108140Z (2018) https://doi.org/10.1117/12.2500792
Event: SPIE/COS Photonics Asia, 2018, Beijing, China

Abstract

The break-down voltage is critical for the reliability and the impact ionization of the 4H-SiC avalanche photodiodes (APDs). In this paper, we report a simulation for 4H-SiC p⁺-n APDs, study the effect of the doping concentration and thickness of the absorption and multiplication region on break-down voltage and gain. We find that with the doping concentration increasing, the break-down voltage decreases, the gain firstly increases and then decreases. When the thickness increases, the break-down voltage firstly increases and then keeps constant due to the width of the depletion region. By adjusting the break-down voltage, the performance of the 4H-SiC APDs can be optimized.

Citation Download Citation

Yi Jiang and Jun Chen "Analysis on the break-down voltage of 4H-SiC avalanche photodiodes", Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108140Z (5 November 2018); https://doi.org/10.1117/12.2500792

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