Simulation of AlGaN avalanche photodiodes

Zhengyu Zhang; Jun Chen

doi:10.1117/12.2505318

12 December 2018 Simulation of AlGaN avalanche photodiodes

Zhengyu Zhang, Jun Chen

Proceedings Volume 10846, Optical Sensing and Imaging Technologies and Applications; 1084620 (2018) https://doi.org/10.1117/12.2505318
Event: International Symposium on Optoelectronic Technology and Application 2018, 2018, Beijing, China

Abstract

In this paper, we report a two-dimensional (2D) simulation for AlGaN separate absorption and multiplication avalanche photodiodes (SAM APDs). The conventional SAM AlGaN multiplication layer has been replaced with a high/low Al content AlGaN heterostructure layer. By the polarization field produced by the heterojunction, the electric field in the multiplication layer can be regulated. Furthermore, a intermediate layer has been inserted between the heterojunction to control the electric field of the APD.

Citation Download Citation

Zhengyu Zhang and Jun Chen "Simulation of AlGaN avalanche photodiodes", Proc. SPIE 10846, Optical Sensing and Imaging Technologies and Applications, 1084620 (12 December 2018); https://doi.org/10.1117/12.2505318

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available