Presentation + Paper
1 March 2019 Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Author Affiliations +
Abstract
We report here an optically pumped deep UV edge emitting laser with AlGaN MQWs active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21- period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV Excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is predominantly TE polarized with a polarization suppression ratio of 24 dB. The side mode suppression ration (SMSR) is measured to be around 14 dB at 465 kW/cm2.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akhil R. K. Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, Rafael Dalmau, John D. Albrecht, Baxter Moody, Zhenqiang Ma, and Weidong Zhou "Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180I (1 March 2019); https://doi.org/10.1117/12.2508717
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Deep ultraviolet

Aluminum nitride

Optical pumping

Quantum wells

Heterojunctions

Laser optics

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