Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array

Cheng Liu; Bryan Melanson; Yu Kee Ooi; Matthew Hartensveld; Jing Zhang

doi:10.1117/12.2510488

1 March 2019 Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO₂ microsphere array

Cheng Liu, Bryan Melanson, Yu Kee Ooi, Matthew Hartensveld, Jing Zhang

Author Affiliations +

Proceedings Volume 10918, Gallium Nitride Materials and Devices XIV; 109180Q (2019) https://doi.org/10.1117/12.2510488
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Light extraction efficiency (η_extraction) remains as a big challenge for high-efficiency deep-ultraviolet (UV) lightemitting diodes (LEDs) due to the large refractive index contrast at the AlN(sapphire)/air interface. Various surface patterning approaches such as microdome design and patterned sapphire substrates have been proposed to address the low η_extraction issue. Nevertheless, these previously proposed methods all involved additional complicated fabrication steps and the polarization-dependent analysis for these devices has not been investigated experimentally. In this work, we investigate the feasibility of using 700-nm SiO₂ microsphere array on 280 nm flip-chip UV LEDs to improve the η_extraction. Angle- and polarization-dependent electroluminescence measurements have been performed to compare the 280 nm LEDs with and without the SiO₂ microsphere array. The UV LED with microsphere array showed enhancement for transverse-electric (TE)-polarized light intensities at small angles while decreased intensities at large angles with respect to c-axis, as compared to the device without SiO₂ microspheres For instance, up to 7.4% enhancement is observed at θ = 0°. However, for transverse-magnetic (TM)-polarized light, the intensities largely remain the same at small angles while decrease at large angles. Cross-sectional near-field electric field distribution from three-dimensional finite-difference time-domain simulation has confirmed that the use of SiO₂ microspheres array resulted in scattering of photons at the sapphire/SiO₂ microspheres interface, which eventually leads to enhanced TE-photons extraction at small-angles. From simulation, the light radiation patterns from the UV LED with SiO₂ spheres are reshaped to a small-angle-favored pattern without reducing the total output power, showing great consistency with the measurement results.

Conference Presentation

Citation Download Citation

Cheng Liu, Bryan Melanson, Yu Kee Ooi, Matthew Hartensveld, and Jing Zhang "Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO₂ microsphere array", Proc. SPIE 10918, Gallium Nitride Materials and Devices XIV, 109180Q (1 March 2019); https://doi.org/10.1117/12.2510488

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