Magnetization switching induced by electron- and magnon-mediated spin torque in topological insulator devices (Conference Presentation)

Yi Wang; Dapeng Zhu; Hyunsoo Yang

doi:10.1117/12.2528623

10 September 2019 Magnetization switching induced by electron- and magnon-mediated spin torque in topological insulator devices (Conference Presentation)

Yi Wang, Dapeng Zhu, Hyunsoo Yang

Author Affiliations +

Proceedings Volume 11090, Spintronics XII; 110901O (2019) https://doi.org/10.1117/12.2528623
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Widespread applications of spintronic devices require an efficient method to manipulate the local magnetization. Topological insulators, such as Bi2Se3, are an emerging state of quantum matter, expected to exhibit more efficient charge-to-spin conversion and thus spin-obit torques (SOTs) compared to that of heavy metals. Here, we investigate the SOTs in the Bi2Se3/ferromagnet hetrostructures at different temperatures by the spin torque ferromagnetic resonance (ST-FMR) technique. We find that the SOTs efficiency abruptly increases from 0.047 at 300 K to 0.42 below 50 K. Moreover, we observe a significant out-of-plane SOT efficiency in the low temperature range. We identify that the spin-momentum-locked topological surface states (TSS) play an important role in the strong SOTs. By decreasing the Bi2Se3 thickness, we achieve TSS dominant SOT. The SOT efficiency is enhanced by more than 5 times below 8 quintuple layers and reaches a maximum value of ~1.75 at 5 quintuple layers at room temperature. In addition, the electron-mediated spin torque induced magnetization switching in the Bi2Se3/NiFe heterostructure is successfully achieved at room temperature. The switching current density, JC, is extremely low (~6 × 10^5 A/cm^2), which is much smaller than that in heavy metals. Our results illustrate that the thinner topological insulators possess a strong capability for generating SOTs. We also report the magnetization reorientation induced by magnon-mediated spin torque in topological insulator devices. Much less Joule heating is expected by taking advantage of magnons, which can carrier spin angular momentum without involving moving charges. Our observation is of importance for magnon-based future spin-devices.

Conference Presentation

Citation Download Citation

Yi Wang, Dapeng Zhu, and Hyunsoo Yang "Magnetization switching induced by electron- and magnon-mediated spin torque in topological insulator devices (Conference Presentation)", Proc. SPIE 11090, Spintronics XII, 110901O (10 September 2019); https://doi.org/10.1117/12.2528623

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Switching

Metals

Temperature metrology

Ferromagnetics

Heterojunctions

Magnons

Quantum efficiency

Show All Keywords

Keywords/Phrases

Search In:

Publication Years