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19 November 2019 A bonded template-assisted monolithic integration platform
Yingtao Hu, Di Liang, Geza Kurczveil, Raymond G. Beausoleil
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Proceedings Volume 11184, Optoelectronic Devices and Integration VIII; 111840O (2019) https://doi.org/10.1117/12.2539077
Event: SPIE/COS Photonics Asia, 2019, Hangzhou, China
Abstract
We present room-temperature continuous-wave lasing of 1.31 μm multi-quantum well lasers on a novel defect-free heterogeneous III-V-on-silicon integration platform. The epitaxially grown laser structure on the platform shows significantly low dislocation density of 9.5×104 cm-2, leading to a minimal threshold current density of 813 A/cm2. These results bring promise to create multi functionalities like source, modulation and detection, etc. on such a defect-free, low-cost, large-scale substrate for Datacom applications.
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Yingtao Hu, Di Liang, Geza Kurczveil, and Raymond G. Beausoleil "A bonded template-assisted monolithic integration platform", Proc. SPIE 11184, Optoelectronic Devices and Integration VIII, 111840O (19 November 2019); https://doi.org/10.1117/12.2539077
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KEYWORDS
Silicon
Epitaxy
Silicon photonics
Light sources
Semiconductor lasers
Transmission electron microscopy
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