Presentation + Paper
26 February 2020 Amorphous silicon waveguide escalator: monolithic integration of active components on 3 μm SOI platform
Author Affiliations +
Proceedings Volume 11285, Silicon Photonics XV; 1128507 (2020) https://doi.org/10.1117/12.2544311
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
VTT’s 3 μm SOI platform with record low propagation loss (0.1 dB/cm for fundamental mode), as well as polarization insensitivity, offers a rich portfolio of efficient passive and active components. With a view to extend the component toolbox by monolithically integrating high-speed plasmonic modulators, we have developed an a-Si:H based waveguide escalator to take out light from highly confined thick-SOI passives to the top layer where active materials are monolithically integrated. Using the compact escalator, monolithic integration of various high-speed active components on the 3 μm SOI platform are proposed.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Arijit Bera, Matteo Cherchi, Kirsi Tappura, Päivi Heimala, and Timo Aalto "Amorphous silicon waveguide escalator: monolithic integration of active components on 3 μm SOI platform", Proc. SPIE 11285, Silicon Photonics XV, 1128507 (26 February 2020); https://doi.org/10.1117/12.2544311
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KEYWORDS
Waveguides

Silicon

Amorphous silicon

Light wave propagation

Absorption

Semiconducting wafers

Modulators

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