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9 March 2020 Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)
Aurelien David
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Proceedings Volume 11302, Light-Emitting Devices, Materials, and Applications XXIV; 113020V (2020) https://doi.org/10.1117/12.2535805
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We will present recent findings on the physics of III-nitride recombinations, including the demonstration of defect-assisted Auger recombination as a significant droop process, and the intricacies of low-current radiative recombinations, where alloy disorder and Coulomb interaction play a key role. We will discuss implications for future LED applications, from long-wavelength devices to low-power micro-LEDs.
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Aurelien David "Recombination physics in III-nitrides and device implication from micro-LEDs to long-wavelength emitters (Conference Presentation)", Proc. SPIE 11302, Light-Emitting Devices, Materials, and Applications XXIV, 113020V (9 March 2020); https://doi.org/10.1117/12.2535805
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KEYWORDS
Physics
Light emitting diodes
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