GaAs/A1GaAs Double Heterostructure Laser Monolithically Integrated With Passive Waveguide

D. Remiens; L. Menigaux; L. Dugrand; G Ben Assayag; J. Gierak; P. Sudraud

doi:10.1117/12.961883

6 December 1989 GaAs/A1GaAs Double Heterostructure Laser Monolithically Integrated With Passive Waveguide

D. Remiens, L. Menigaux, L. Dugrand, G Ben Assayag, J. Gierak, P. Sudraud

Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961883
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

Monolithic integration of a double heterostructure laser butt-coupled to an optical waveguide is demonstrated on GaAs. The flexibility offered by Focused Ion Beam Etching (F.I.B.E.) is used in this work to fabricate Fabry-Perot resonators. The monolithic device exhibits a threshold current of 90 mA in pulsed operation and an optical power output of 7 mW is measured from the waveguide.

Citation Download Citation

D. Remiens, L. Menigaux, L. Dugrand, G Ben Assayag, J. Gierak, and P. Sudraud "GaAs/A1GaAs Double Heterostructure Laser Monolithically Integrated With Passive Waveguide", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961883

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