Optical Crossconnect Circuit With Intersecting Waveguides On InP Substrate

M Erman; P. Jarry; H. Angenent; C. Graver; J. M. Auger; A. Laurent

doi:10.1117/12.961896

6 December 1989 Optical Crossconnect Circuit With Intersecting Waveguides On InP Substrate

M Erman, P. Jarry, H. Angenent, C. Graver, J. M. Auger, A. Laurent

Proceedings Volume 1141, 5th European Conf on Integrated Optics: ECIO '89; (1989) https://doi.org/10.1117/12.961896
Event: 1989 International Congress on Optical Science and Engineering, 1989, Paris, France

Abstract

We present experimental and theoretical results on an optical circuit which includes four intersecting waveguides. Each intersecting waveguide has been modelized using the beam propagation method (BPM). The circuit has been fabricated on InP substrate using double heterostructure GaInAsP/InP rib waveguides. The layers are grown by chloride vapor phase epitaxy and the rib is defined using reactive ion etching. Each intersecting waveguide is a two input-two output device and can he characterized by its transfer 2x2 matrix. The parameters of this matrix have been calculated for various intersecting angles as well as for various lateral confinements, which actually correspond to different etching depths. The calculated and the experimental results are in good agreement. The optical circuit can he used to realize a 1x4 switching matrix. The basic switching element is the total internal reflection (FIR) switch which combines the passive intersecting waveguide and an electrode. The latter activates the switch by carrier injection. The TIR switch has been also modelled using the BPM and important parameters, such as crosstalk, driving current have been derived.

Citation Download Citation

M Erman, P. Jarry, H. Angenent, C. Graver, J. M. Auger, and A. Laurent "Optical Crossconnect Circuit With Intersecting Waveguides On InP Substrate", Proc. SPIE 1141, 5th European Conf on Integrated Optics: ECIO '89, (6 December 1989); https://doi.org/10.1117/12.961896

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