Progress in lateral Ga2O3 field-effect transistor technology for high-frequency wireless communications

Masataka Higashiwaki; Takafumi Kamimura

doi:10.1117/12.2591981

5 March 2021 Progress in lateral Ga₂O₃ field-effect transistor technology for high-frequency wireless communications

Masataka Higashiwaki, Takafumi Kamimura

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116870B (2021) https://doi.org/10.1117/12.2591981
Event: SPIE OPTO, 2021, Online Only

Abstract

In this talk, we will present fabrication and characterization of submicron Ga2O3 field-effect transistors (FETs) for high-frequency wireless communications. Superior small-signal characteristics of a current-gain cutoff frequency of 9 GHz and a maximum oscillation frequency of 27 GHz were achieved at a gate length of 200 nm. Simple delay-time analysis on the FETs was also performed to investigate an effective electron velocity and a proportion of each delay component to the total delay time.

Conference Presentation

Citation Download Citation

Masataka Higashiwaki and Takafumi Kamimura "Progress in lateral Ga₂O₃ field-effect transistor technology for high-frequency wireless communications", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116870B (5 March 2021); https://doi.org/10.1117/12.2591981

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