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5 March 2021 Advanced roughness characterization for 300mm Si photonics patterning and optimization
Remi Le Tiec, Shimon Levi, Angela Kravtsov, Olga Novak, Cecilia Dupre, Cyril Vannuffel, Tristan Dewolf, Stephanie Garcia, Quentin Wilmart, Jonathan Faugier-Tovar
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Proceedings Volume 11690, Smart Photonic and Optoelectronic Integrated Circuits XXIII; 116900K (2021) https://doi.org/10.1117/12.2578550
Event: SPIE OPTO, 2021, Online Only
Abstract
Roughness has always been a key detractor of the optical losses within the silicon photonics devices. With scaling at 300mm wafer, there is an introduction of new tools such immersion lithography scanner, OPC technique that can help to drive furthermore the optical losses reduction. This study will detail the work done on characterizing multiple steps of the process (Lithography, Etch, Annealing) and using roughness tools such LER (Line Edge Roughness), LWR (Line Width Roughness) and finally PSD (Power Spectral Density) to understand the main detractor of the optical losses at each step. These data will be extracted using SEM imaging from VeritySEM 6i.
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Remi Le Tiec, Shimon Levi, Angela Kravtsov, Olga Novak, Cecilia Dupre, Cyril Vannuffel, Tristan Dewolf, Stephanie Garcia, Quentin Wilmart, and Jonathan Faugier-Tovar "Advanced roughness characterization for 300mm Si photonics patterning and optimization", Proc. SPIE 11690, Smart Photonic and Optoelectronic Integrated Circuits XXIII, 116900K (5 March 2021); https://doi.org/10.1117/12.2578550
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KEYWORDS
Silicon photonics
Optical lithography
Photonics
Silicon
Line edge roughness
Line width roughness
Metrology
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