Paper
26 January 2021 Analysis on the application, development, and future prospects of Gallium Nitride (GaN)
Tongkai Liu
Author Affiliations +
Proceedings Volume 11767, 2020 International Conference on Optoelectronic Materials and Devices; 1176712 (2021) https://doi.org/10.1117/12.2592222
Event: 2020 International Conference on Optoelectronic Materials and Devices, 2020, Guangzhou, China
Abstract
The paper uses secondary research to investigate various constructs and functional structures of GaN as a thirdgeneration semiconductor. A brief history of semiconductors is provided in terms of the generations that they occur. GaN was introduced in the 1990s, but its utility evolved until the 21st century. At the advent of its invention, Silicon (Si) and germanium (Ge) had been the most commonly used semiconductors. GaN presented unique advantages ranging from cost to size and utility. This was the frontier of new applications of semiconductors. The largest applications of GaN have been in LEDs, transducers, and transistors. GaN also has its limitations, which include its generally immobile energy band, and its substrate incompatibility. The future of GaN can be projected by factoring three main variables. These are cost, application/utility, and limitations.
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tongkai Liu "Analysis on the application, development, and future prospects of Gallium Nitride (GaN)", Proc. SPIE 11767, 2020 International Conference on Optoelectronic Materials and Devices, 1176712 (26 January 2021); https://doi.org/10.1117/12.2592222
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductors

Gallium nitride

Silicon

Light emitting diodes

Optoelectronic devices

Gallium arsenide

Manufacturing

Back to Top