Accurate evaluation of Cr/n-Si Schottky barrier height using thermionic emission theory and external resistors

Zih-Chun Su; Ching-Fuh Lin

doi:10.1117/12.2594066

1 August 2021 Accurate evaluation of Cr/n-Si Schottky barrier height using thermionic emission theory and external resistors

Zih-Chun Su, Ching-Fuh Lin

Author Affiliations +

Proceedings Volume 11831, Infrared Sensors, Devices, and Applications XI; 118310A (2021) https://doi.org/10.1117/12.2594066
Event: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States

Abstract

The Cr/n-Si Schottky interface can effectively extend the cutoff wavelength of the silicon-based device. The estimated barrier height, ideality factor, and series resistance are obtained by characteristic curves and thermionic-emission formula. In order to improve the accuracy of the estimation, a method of adjusting the external resistance in the experimental setup was proposed in this paper. Eventually, the Cr/n-Si Schottky device was well analyzed with an estimated error of < 0.05 in the resistance value, and the results also confirmed that the detection wavelength of the silicon-based components could be extended to mid-infrared range.

Conference Presentation

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Zih-Chun Su and Ching-Fuh Lin "Accurate evaluation of Cr/n-Si Schottky barrier height using thermionic emission theory and external resistors", Proc. SPIE 11831, Infrared Sensors, Devices, and Applications XI, 118310A (1 August 2021); https://doi.org/10.1117/12.2594066

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