Progress in EUV resist screening by interference lithography for high-NA lithography

T. Allenet; M. Vockenhuber; C-K. Yeh; D. Kazazis; J. G. Santaclara; L. van Lent-Protasova; Y. Ekinci

doi:10.1117/12.2600963

21 December 2021 Progress in EUV resist screening by interference lithography for high-NA lithography

T. Allenet, M. Vockenhuber , C-K. Yeh, D. Kazazis, J. G. Santaclara, L. van Lent-Protasova, Y. Ekinci

Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540N (2021) https://doi.org/10.1117/12.2600963
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only

Abstract

The introduction of novel photoresists is a critical enabler of future technology nodes, including the upcoming high-NA EUVL deployment. The development of EUV materials is investigated within the scope of a resist screening program between ASML and PSI. In this work, the EUV interference lithography tool at PSI is used to study materials performance in terms of the resolution-roughness-sensitivity tradeoff, with an emphasis on ultimate resolution. Here, we review the development status of different platforms by considering recent results obtained in the first half of 2021 (H1-2021). Patterning resolution of 11 nm half-pitch is achieved with both CAR and non-CAR materials, which indicates steady progress in the global resist development. Perspectives of this work are discussed towards enabling 8 nm half-pitch resolution solutions.

Conference Presentation

Citation Download Citation

T. Allenet, M. Vockenhuber , C-K. Yeh, D. Kazazis, J. G. Santaclara, L. van Lent-Protasova, and Y. Ekinci "Progress in EUV resist screening by interference lithography for high-NA lithography", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540N (21 December 2021); https://doi.org/10.1117/12.2600963

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