Adsorption And Photodissociation Studies Of Tetramethyltin On CdTe(100)

Hartmut Hochst; Mike A. Engelhardt

doi:10.1117/12.963973

23 February 1990 Adsorption And Photodissociation Studies Of Tetramethyltin On CdTe(100)

Hartmut Hochst, Mike A. Engelhardt

Proceedings Volume 1190, Laser/Optical Processing of Electronic Materials; (1990) https://doi.org/10.1117/12.963973
Event: 1989 Microelectronic Integrated Processing Conferences, 1989, Santa Clara, United States

Abstract

First experiments of the epitaxial growth of diamond structured a-Sn films by synchrotron radiation assisted photodissociation are reported. Surface sensitive core and valence band photoemission spectroscopy is used to study the adsorption behavior and photodissociation of tetramethyltin on clean and highly ordered CdTe(100) surfaces. A quantitative analysis including the work function change and the evolution of substrate and adsorbate intensities during the overlayer deposition suggests that individual monolayers can be grown by the technique of synchrotron radiation assisted metalorganic layer epitaxy (SRMOLE).

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Hartmut Hochst and Mike A. Engelhardt "Adsorption And Photodissociation Studies Of Tetramethyltin On CdTe(100)", Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); https://doi.org/10.1117/12.963973

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