Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan; Thomas Van den Dries; Maarten Kuijk

doi:10.1117/12.2608691

5 March 2022 Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths

Gobinath Jegannathan, Thomas Van den Dries, Maarten Kuijk

Proceedings Volume 12006, Silicon Photonics XVII; 1200608 (2022) https://doi.org/10.1117/12.2608691
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

The performance of the current-assisted single-photon avalanche diode (CA-SPAD) can be demonstrated to its full extent when used in conjunction with an active quenching circuit (AQC) located on the same chip. Counting rates, photon detection probability and single-photon timing resolution improve substantially as is evidenced by measurements in this paper. It is also demonstrated that a PDP of 20 % at 940 nm can be reached, making the CA-SPAD one of the best performing front-side illuminated (FSI) CMOS SPADs for near-infrared (NIR) operation.

Conference Presentation

Citation Download Citation

Gobinath Jegannathan, Thomas Van den Dries, and Maarten Kuijk "Active-quenched CA-SPADs demonstrating high PDP at NIR wavelengths", Proc. SPIE 12006, Silicon Photonics XVII, 1200608 (5 March 2022); https://doi.org/10.1117/12.2608691

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