Poster + Paper
26 May 2022 Spectral analysis overlay measurement approach for improvement of overlay accuracy in advanced integrated circuits
Author Affiliations +
Conference Poster
Abstract
Overlay metrology plays a significant role in process and yield control for integrated circuit (IC) manufacturing. As the On-Product Overlay (OPO) in advance nodes is reduced to a few nanometers, a very small margin is left for measurement inaccuracy. We introduce a multi-wavelength (spectral) analysis and measurement method, capable of characterizing overlay inaccuracy signatures on the wafer, and quantifying and removing the inaccuracy portion of the overlay measurement, resulting in a more accurate measurement, better process control, and yield enhancement. This method was applied to SK hynix’s advanced process production wafers, demonstrating an enhancement in accuracy over single-wavelength based overlay measurements.
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Levinski, Yuri Paskover, Sharon Aharon, Daria Negri, Nadav Gutman, K. Nireekshan Reddy, Jeongpyo Lee, Hedvi Spielberg, Dongyoung Lee, Hyunjun Kim, Sukwon Park, Bohye Kim, Hongseok Jang, Honggoo Lee, and Sangho Lee "Spectral analysis overlay measurement approach for improvement of overlay accuracy in advanced integrated circuits", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120531Z (26 May 2022); https://doi.org/10.1117/12.2613981
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KEYWORDS
Overlay metrology

Semiconducting wafers

Process control

Integrated circuits

Principal component analysis

Scanners

Wafer-level optics

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