Copper filled contact plugs formation

S. Gorokhov; S. Patyukov; V. Plaksin

doi:10.1117/12.2624164

30 January 2022 Copper filled contact plugs formation

S. Gorokhov, S. Patyukov, V. Plaksin

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121571B (2022) https://doi.org/10.1117/12.2624164
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

The paper considers the possibility of the formation of contact plugs filled with copper instead of conventional tungsten (Fig. 1). There are increased requirements for diffusion barrier layers due to the proximity to transistor structures. Several candidate films based on TaN, TiN have been evaluated as diffusion barrier layers in terms of adhesion to copper, electrical properties, and filling contact plug. As a result, device structures with copper contact plugs have been obtained, and corresponding to the specification results have been confirmed.

Citation Download Citation

S. Gorokhov, S. Patyukov, and V. Plaksin "Copper filled contact plugs formation", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121571B (30 January 2022); https://doi.org/10.1117/12.2624164

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