Research method of the field transistors high frequency parameters using network analyzer

T. Krupkina; V. Losev; A. Khlybov; D. Rodionov; E. Kotlyarov; P. Timoshenkov

doi:10.1117/12.2623146

30 January 2022 Research method of the field transistors high frequency parameters using network analyzer

T. Krupkina, V. Losev, A. Khlybov, D. Rodionov, E. Kotlyarov, P. Timoshenkov

Proceedings Volume 12157, International Conference on Micro- and Nano-Electronics 2021; 121571N (2022) https://doi.org/10.1117/12.2623146
Event: International Conference on Micro- and Nano-Electronics 2021, 2021, Zvenigorod, Russian Federation

Abstract

The necessity of using a vector network analyzer (VNA) for RF/MW device characterization is shown. Field transistor equivalent circuit has been analyzed for dynamic parameters research. Authors have got analytical expressions and provided method for high-frequency field transistors parameters determination based on s-parameters measurements using a VNA. The recommendations for test transistors' optimal parameters are presented. The device under test in this paper is GaAs HEMT double gate transistor with w=150 um. The research of transistors parameters was done in operating point: V_ds=1.4 V, V_gs=-0.6 V. This paper contains method for HEMT transistor capacitance (C_in, C_gd, C_gs) determination using time-domain reflectometry (TDR). Authors have got theoretical and experimental values for f_MAX that show good coincidence.

Citation Download Citation

T. Krupkina, V. Losev, A. Khlybov, D. Rodionov, E. Kotlyarov, and P. Timoshenkov "Research method of the field transistors high frequency parameters using network analyzer", Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 121571N (30 January 2022); https://doi.org/10.1117/12.2623146

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