Paper
1 May 1990 Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits
Shogo Takahashi, Katsuhiko Goto, H. Uesugi, Harumi Nishiguchi, Etsuji Omura, Hirofumi Namizaki
Author Affiliations +
Abstract
A low threshold coplanar vertical injection laser diode (CPVI-LD) has been newly developed utilizing impurityinduced disordering of a single quantum well. The threshold current as low as 13 mA has been realized in CW operation. The behavior of Si and Zn solid phase diffusion is precisely investigated for the realization of the CPVJ-LD.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shogo Takahashi, Katsuhiko Goto, H. Uesugi, Harumi Nishiguchi, Etsuji Omura, and Hirofumi Namizaki "Low threshold current coplanar vertical injection laser diode for optoelectronic integrated circuits", Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); https://doi.org/10.1117/12.18242
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Cited by 1 scholarly publication.
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KEYWORDS
Diffusion

Silicon

Semiconductor lasers

Gallium arsenide

Zinc

Laser applications

Arsenic

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