Fiber lasers are becoming an increasingly important option for LIDAR light sources in autonomous driving technology due to their operation in the eye safe 1550 nm spectral region and their intrinsic high beam quality, power and pulse characteristics. As an essential component for the pumping of fiber lasers, semiconductor laser diodes with high temperature stability, power and reliability are necessary. In this report we present the results of a continuous-wave (CW) single edge emitting laser diode designed to operate at 94x nm at 25 °C heat sink temperature and 97x nm at 100 °C. Various epitaxial and laser geometry designs have been implemented to optimize the laser performance over this wide environmental temperature range. The laser epitaxy is based on the AlGaAs/GaAs material system, with an InGaAs strained quantum well (QW). With various designs of laser geometry including emitting area and cavity length, devices are designed, grown, fabricated, and tested with the optimized design improving the temperature stability, power, and efficiency of the laser chip. A peak efficiency of over 54% at heat sink temperature of 105 °C and over 12 W before thermal roll-over occurs has been achieved. In addition to the thermal performance we also report the slow axis beam parameter product of the chip of <5 mm.mrad with polarization purity >98% at operating current and show the preliminary reliability data at the high temperature operation.
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