ALF: a facility for x-ray lithography

L. Grant Lesoine; Kenneth W. Kukkonen; Jeffrey A. Leavey

doi:10.1117/12.20153

1 May 1990 ALF: a facility for x-ray lithography

L. Grant Lesoine, Kenneth W. Kukkonen, Jeffrey A. Leavey

Proceedings Volume 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX; (1990) https://doi.org/10.1117/12.20153
Event: Microlithography '90, 1990, San Jose, CA, United States

Abstract

In the previous paper, you heard a description of the electron storage ring system that IBM has ordered for X-ray Lithography. In this paper we shall describe the facility that is being constructed for the ESR and explain some of the decisions made in its design. The facility, which we have dubbed ALF for Advanced Lithographic Facility, is a part of the $O.5B Advanced Semiconductor Technology Center now being occupied at IBM's East Fishkill, New York semiconductor plant. Ground was broken in October of 1988 and the ALF building is expected to be ready for occupancy in July of this year. At that time, initial preparations for installation of the ESR and the lithographic tooling will begin. Bechtel National of San Francisco is the Design-Build contractor. As you may have concluded from Dave Andrew's paper, an ESR and its associated cryogenic, cooling, power and control systems is a complex tool which requires specialized support. In addition, the facility must support the vibration control and clean room requirements of submicron lithographic processing. Also, significant concerns of safety and security must be met. We will now describe our solutions to these requirements.

Citation Download Citation

L. Grant Lesoine, Kenneth W. Kukkonen, and Jeffrey A. Leavey "ALF: a facility for x-ray lithography", Proc. SPIE 1263, Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, (1 May 1990); https://doi.org/10.1117/12.20153

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