Paper
17 August 2023 U-L-shaped silicon modulator for efficient and high-speed transmission
Author Affiliations +
Proceedings Volume 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023); 127572Z (2023) https://doi.org/10.1117/12.2690208
Event: 3rd International Conference on Laser, Optics and Optoelectronic Technology (LOPET 2023), 2023, Kunming, China
Abstract
In order to achieve effective modulation, researchers have studied various doping profiles within silicon modulators, but optimization has so far mainly been carried out in the cross-section or solely in the propagation direction. Generating 3D doping profile can add more optimizing dimensions to the modulator design. This work proposes a modulator based on U-shaped and L-shaped junctions by the 3D effective Monte-Carlo method. The simulation results show that the modulation efficiency is 0.67 V·cm, and the loss is 25.7 dB/cm, with the bandwidth more than 36.3 GHz. This work demonstrates the benefits of 3D modulator design as the direction of light propagation is utilized to transport carriers, and provides a modulator solution for high-speed datacom.
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zijian Zhu, Yingxuan Zhao, and Fuwan Gan "U-L-shaped silicon modulator for efficient and high-speed transmission", Proc. SPIE 12757, 3rd International Conference on Laser, Optics, and Optoelectronic Technology (LOPET 2023), 127572Z (17 August 2023); https://doi.org/10.1117/12.2690208
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KEYWORDS
Modulation

Doping

Silicon

Capacitance

Design and modelling

Resistance

Data communications

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